Multiband effective bond-orbital model for nitride semiconductors with wurtzite structure

Polarons in Wurtzite Nitride Semiconductors

Polaron binding energy and effective mass are calculated for semiconductors with wurtzite crystalline structure from the first order electron-phonon corrections to the self-energy. A recently introduced Fröhlich-like electron-phonon interaction Hamiltonian which accounts for the LO and TO polarizations mixing due to the anisotropy is used in the calculation. The polaronic damping rates are eval...

Internal structure of multiphase zinc-blende wurtzite gallium nitride nanowires.

In this paper, the internal structure of novel multiphase gallium nitride nanowires in which multiple zinc-blende and wurtzite crystalline domains grow simultaneously along the entire length of the nanowire is investigated. Orientation relationships within the multiphase nanowires are identified using high-resolution transmission electron microscopy of nanowire cross-sections fabricated with a ...

Nanosphere Lithography for Nitride Semiconductors

Wurtzite-derived ternary I–III–O2 semiconductors

Ternary zincblende-derived I-III-VI2 chalcogenide and II-IV-V2 pnictide semiconductors have been widely studied and some have been put to practical use. In contrast to the extensive research on these semiconductors, previous studies into ternary I-III-O2 oxide semiconductors with a wurtzite-derived β-NaFeO2 structure are limited. Wurtzite-derived β-LiGaO2 and β-AgGaO2 form alloys with ZnO and t...

Critical point transitions of wurtzite indium nitride

The optical transmission, photoluminescence, and reflection spectra have been measured on a high-quality wurtzite indium nitride (InN) single crystal in the range of 0.5–20.0 eV. The fundamental bandgap of intrinsic InN has been extracted by taking into account the Burstein–Moss shift, bandgap renormalization and Urbach band tail effects, and found to be very close to the recent strongly re-est...